| Product Attributes Select All |
| Category | Discrete Semiconductor Products |
| Online Catalog | NPN Transistors |
| Voltage - Collector Emitter Breakdown (Max) | 160V |
| Supplier Device Package | SOT-23-3 |
| PCN Design/Specification | Green Encapsulate 15/May/2008 |
| Transistor Type | NPN |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Manufacturer | Diodes Incorporated |
| Other Names | MMBT5551-FDIDKR |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Frequency - Transition | 300MHz |
| Datasheets | MMBT5551 |
| Current - Collector (Ic) (Max) | 600mA |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| PCN Other | Copper Bond Wire and Wafer Source 07/Nov/2013 |
| Mounting Type | Surface Mount |
| EDA / CAD Models | Download from Accelerated Designs |
| Standard Package | 1 |
| Series | - |
| Power - Max | 300mW |
| RoHS Information | RoHS Cert of Compliance |
| Packaging | Digi-Reel® |
| Part Status | Active |
| Family | Transistors - Bipolar (BJT) - Single |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
