1N4935G-T 规格参数
Product Attributes Select All | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Category | Discrete Semiconductor Products |
Reverse Recovery Time (trr) | 200ns |
Capacitance @ Vr, F | - |
Datasheets | 1N493xG/L |
Diode Type | Standard |
Mounting Type | Through Hole |
EDA / CAD Models | Download from Accelerated Designs |
Supplier Device Package | DO-41 |
Current - Reverse Leakage @ Vr | 5µA @ 200V |