Cypress Semiconductor
FM25640B-GATR
64-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 High-endurance 100 trillion (1014) read/writes 151-year data retention (See the Data Retention and Endurance table) NoDelay™ writes Advanced high-reliability ferroelectric process Very fast serial peripheral interface (SPI) Up to 20 MHz frequency Direct hardware replacement for serial flash and EEPROM Supports SPI mode 0 (0, 0) and mode 3 (1, 1) Sophisticated write protection scheme Hardware protection using the Write Protect (WP) pin Software protection using Write Disable instruction Software block protection for 1/4, 1/2, or entire array Low power consumption 250 μA active current at 1 MHz 4 μA (typ) standby current Voltage operation: VDD = 4.5 V to 5.5 V Industrial temperature: -40 °C to +85 °C 8-pin small outline integrated circuit (SOIC) package Restriction of hazardous substances (RoHS) compliant
中间价(CNY):27.1776
FM25640B-GATR 规格参数
| Product Attributes Select All | |
| PCN Assembly/Origin | Qualification Passivation Layer 22/Mar/2014 Qualification Wafer Facility 27/Mar/2014 |
| Category | Integrated Circuits (ICs) |
| Memory Type | FRAM (Ferroelectric RAM) |
| Supplier Device Package | 8-SOIC |
| PCN Design/Specification | F-FRAM Marking Changes 30/Aug/2013 Datasheet Update 27/Feb/2014 |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Voltage - Supply | 4.5 V ~ 5.5 V |
| Video File | Cypress Nonvolatile RAMs |
| Manufacturer | Cypress Semiconductor Corp |
| Other Names | FM25640B-GATRRA FM25640BGATR |