Cypress Semiconductor

64-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 High-endurance 100 trillion (1014) read/writes 151-year data retention (See the Data Retention and Endurance table) NoDelay™ writes Advanced high-reliability ferroelectric process Very fast serial peripheral interface (SPI) Up to 20 MHz frequency Direct hardware replacement for serial flash and EEPROM Supports SPI mode 0 (0, 0) and mode 3 (1, 1) Sophisticated write protection scheme Hardware protection using the Write Protect (WP) pin Software protection using Write Disable instruction Software block protection for 1/4, 1/2, or entire array Low power consumption 250 μA active current at 1 MHz 4 μA (typ) standby current Voltage operation: VDD = 4.5 V to 5.5 V Industrial temperature: -40 °C to +85 °C 8-pin small outline integrated circuit (SOIC) package Restriction of hazardous substances (RoHS) compliant