| Configuration | Dual Common Source |
| PCB changed | 4 |
| Maximum Gate Source Leakage Current (nA) | 140 |
| Number of Elements per Chip | 2 |
| Typical Power Gain (dB) | 20.8 |
| ECCN (US) | EAR99 |
| Channel Mode | Enhancement |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Operating Temperature (°C) | 225 |
| Supplier Package | HSOP-F |
| Maximum IDSS (uA) | 1.4 |
| Process Technology | LDMOS |
| Package Height | 3.6 |
| Channel Type | N |
| Minimum Frequency (MHz) | 700 |
| Typical Forward Transconductance (S) | 3 |
| EU RoHS | Compliant with Exemption |
| Military | No |
| Maximum VSWR | 10 |
| Maximum Drain Source Voltage (V) | 65 |
| Maximum Gate Source Voltage (V) | 13 |
| Maximum Drain Source Resistance (mOhm) | 500(Typ)@6.05V |
| Package Length | 20.57 |
| Pin Count | 4 |
| Mounting | Surface Mount |
| Typical Drain Efficiency (%) | 19.8 |
| Mode of Operation | 2-Carrier W-CDMA |
| Output Power (W) | 2.5(Typ) |
| Part Status | Active |
| Packaging | Tape and Reel |
| Maximum Gate Threshold Voltage (V) | 2.3 |
| Package Width | 9.96 |
| Maximum Frequency (MHz) | 1000 |
