| Configuration | Dual Common Source |
| PCB changed | 12 |
| Maximum Gate Source Leakage Current (nA) | 120 |
| Number of Elements per Chip | 2 |
| Typical Power Gain (dB) | 18(Max) |
| ECCN (US) | EAR99 |
| Channel Mode | Enhancement |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Operating Temperature (°C) | 150 |
| Supplier Package | HVSON EP |
| Maximum IDSS (uA) | 1.2 |
| Process Technology | LDMOS |
| Package Height | 0.82 |
| Channel Type | N |
| EU RoHS | Compliant |
| Military | No |
| Maximum Drain Source Voltage (V) | 104 |
| Maximum Gate Source Voltage (V) | 11 |
| Maximum Drain Source Resistance (mOhm) | 4.28(Typ) |
| Package Length | 6 |
| Pin Count | 12 |
| Mounting | Surface Mount |
| Typical Drain Efficiency (%) | 58(Max) |
| Mode of Operation | CW |
| Output Power (W) | 10 |
| Part Status | Active |
| Maximum Gate Threshold Voltage (V) | 1.8(Typ) |
| Package Width | 5 |
| Maximum Frequency (MHz) | 1400 |
