| Configuration | Single |
| PCB changed | 3 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Number of Elements per Chip | 1 |
| Typical Power Gain (dB) | 21 |
| ECCN (US) | EAR99 |
| Typical Rise Time (ns) | 20 |
| Channel Mode | Enhancement |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Operating Temperature (°C) | 200 |
| Supplier Package | LDMOST |
| Maximum IDSS (uA) | 1 |
| Typical Fall Time (ns) | 6 |
| Process Technology | LDMOS |
| Package Height | 4.67(Max) |
| Channel Type | N |
| Minimum Frequency (MHz) | 500 |
| Typical Forward Transconductance (S) | 0.15 |
| EU RoHS | Compliant |
| Maximum Continuous Drain Current (A) | 2.5 |
| Military | No |
| Maximum VSWR | 10 |
| Maximum Drain Source Voltage (V) | 100 |
| Maximum Gate Source Voltage (V) | 13 |
| Maximum Drain Source Resistance (mOhm) | 2750@3.75V |
| Package Length | 20.45(Max) |
| Pin Count | 3 |
| Mounting | Screw |
| Typical Drain Efficiency (%) | 59 |
| Mode of Operation | Pulsed RF |
| Output Power (W) | 25(Min) |
| Part Status | Active |
| Packaging | Bulk |
| Maximum Gate Threshold Voltage (V) | 2.4 |
| Package Width | 5.97(Max) |
| Maximum Frequency (MHz) | 1400 |
