| Typical Input Capacitance @ Vds (pF) | 403@50V |
| Typical Output Capacitance @ Vds (pF) | 138@50V |
| Configuration | Dual Common Source |
| PCB changed | 5 |
| Number of Elements per Chip | 2 |
| Typical Power Gain (dB) | 24 |
| ECCN (US) | EAR99 |
| Channel Mode | Enhancement |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Operating Temperature (°C) | 225 |
| Supplier Package | SOT-539A |
| Process Technology | LDMOS |
| Package Height | 4.7(Max) |
| Channel Type | N |
| EU RoHS | Compliant |
| Maximum Continuous Drain Current (A) | 88 |
| Maximum VSWR | 13 |
| Maximum Drain Source Voltage (V) | 110 |
| Maximum Gate Source Voltage (V) | 11 |
| Maximum Drain Source Resistance (mOhm) | 70(Typ)@6V |
| Package Length | 41.28(Max) |
| Pin Count | 5 |
| Mounting | Screw |
| Typical Drain Efficiency (%) | 71 |
| Mode of Operation | CW|Pulsed RF |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 3@50V |
| Output Power (W) | 1200 |
| Part Status | Active |
| Packaging | Blister |
| Package Width | 10.29(Max) |
| Maximum Frequency (MHz) | 225 |
