Typical Input Capacitance @ Vds (pF) | 255@15V@N Channel|520@15V@P Channel |
Configuration | Dual Common Dual Drain |
Typical Turn-Off Delay Time (ns) | 14.5@N Channel|19@P Channel |
PCB changed | 8 |
Number of Elements per Chip | 2 |
ECCN (US) | EAR99 |
Typical Rise Time (ns) | 2.5@N Channel|5.5@P Channel |
Maximum Power Dissipation (mW) | 2000 |
Channel Mode | Enhancement |
Typical Turn-On Delay Time (ns) | 7.5@P Channel|4.5@N Channel |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Supplier Package | SOIC |
Typical Fall Time (ns) | 7@P Channel|3.5@N Channel |
Package Height | 1.5 |
Channel Type | P|N |
EU RoHS | Compliant with Exemption |
Maximum Continuous Drain Current (A) | 5.5@P Channel|6@N Channel |
Maximum Drain Source Voltage (V) | 30 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Drain Source Resistance (mOhm) | 41@10V@P Channel|30@10V@N Channel |
Package Length | 4.9 |
Typical Gate Charge @ 10V (nC) | 9.2@P Channel|5.2@N Channel |
Standard Package Name | SOP |
Pin Count | 8 |
Mounting | Surface Mount |
Lead Shape | Gull-wing |
Product Category | Power MOSFET |
Package Width | 3.9 |
Typical Gate Charge @ Vgs (nC) | 4.6@4.5V@P Channel|9.2@10V|5.2@10V|2.55@4.5V@N Channel |