ADESTO

Single 2.3V - 3.6V or 2.5V - 3.6V supply Serial Peripheral Interface (SPI) compatible Supports SPI modes 0 and 3 Supports RapidS™ operation Continuous read capability through entire array Up to 85MHz Low-power read option up to 15MHz Clock-to-output time (tV) of 6ns maximum User configurable page size 512 bytes per page 528 bytes per page (default) Page size can be factory pre-configured for 512 bytes Two fully independent SRAM data buffers (512/528 bytes) Allows receiving data while reprogramming the main memory array Flexible programming options Byte/Page Program (1 to 512/528 bytes) directly into main memory Buffer Write Buffer to Main Memory Page Program Flexible erase options Page Erase (512/528 bytes) Block Erase (4KB) Sector Erase (128KB) Chip Erase (16-Mbits) Program and Erase Suspend/Resume Advanced hardware and software data protection features Individual sector protection Individual sector lockdown to make any sector permanently read-only 128-byte, One-Time Programmable (OTP) Security Register 64 bytes factory programmed with a unique identifier 64 bytes user programmable Hardware and software controlled reset options JEDEC Standard Manufacturer and Device ID Read Low-power dissipation 400nA Ultra-Deep Power-Down current (typical) 3µA Deep Power-Down current (typical) 25µA Standby current (typical at 20MHz) 11mA Active Read current (typical) Endurance: 100,000 program/erase cycles per page minimum Data retention: 20 years Complies with full industrial temperature range Green (Pb/Halide-free/RoHS compliant) packaging options 8-lead SOIC (0.150" wide and 0.208" wide) 8-pad Ultra-thin DFN (5 x 6 x 0.6mm) 9-ball Ultra-thin UBGA (6 x 6 x 0.6mm) Die in Wafer Form